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參數(shù)資料
| 型號： | HUF76629D3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA |
| 中文描述： | 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HUF76629D3ST |
2001 Fairchild Semiconductor Corporation
HUF76629D3, HUF76629D3S Rev. B
HUF76629D3, HUF76629D3S
20A, 100V, 0.054
Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.052
,
V
GS
=
10V
- r
DS(ON)
= 0.054
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SDRAIN
HUF76629D3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76629D3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF76629D3
TO-251AA
76629D
HUF76629D3S
TO-252AA
76629D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76629D3ST.
HUF76629D3, HUF76629D3S
100
100
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
20
20
20
20
Figure 4
A
A
A
A
Figures 6, 17, 18
110
0.74
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
December 2001
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76629D3ST_F085 | 功能描述:MOSFET N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m RoHS:否 制造商:Fairchild Semiconductor 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導通）: 配置: 最大工作溫度: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| HUF76629D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76629D3ST_SB82250 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76629D3ST_SB82250 ULTRAFET POWER M |
| HUF76629D3STNL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76629D3STR4885 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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