參數(shù)資料
型號(hào)： HUF76009D3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
中文描述： 20 A, 20 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 252K
代理商： HUF76009D3S
2001 Fairchild Semiconductor Corporation
HUF76009P3, HUF76009D3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
20
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 20A, V
GS
= 10V (Figures 8, 9)
-
0.022
0.027
I
D
= 16A, V
GS
= 5V (Figure 8)
-
0.032
0.039
SWITCHING SPECIFICATIONS
(V
GS
= 5V)
Turn-On Time
t
ON
V
DD
= 10V, I
D
= 16A
V
GS
=
5V, R
GS
= 27
,
(Figures 14, 18, 19)
-
-
186
ns
Turn-On Delay Time
t
d(ON)
-
9
-
ns
Rise Time
t
r
-
115
-
ns
Turn-Off Delay Time
t
d(OFF)
-
19
-
ns
Fall Time
t
f
-
34
-
ns
Turn-Off Time
t
OFF
-
-
80
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 10V, I
D
= 20A
V
GS
=
10V,
R
GS
= 27
(Figures 15, 18, 19)
-
-
150
ns
Turn-On Delay Time
t
d(ON)
-
5.3
-
ns
Rise Time
t
r
-
95
-
ns
Turn-Off Delay Time
t
d(OFF)
-
37
-
ns
Fall Time
t
f
-
33
-
ns
Turn-Off Time
t
OFF
-
-
105
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 10V,
I
D
= 16A,
I
g(REF)
= 1.0mA,
(Figures 13, 16, 17)
-
10.7
13
nC
Total Gate Charge at 5V
Q
g(TOT)
V
GS
= 0V to 5V
-
5.7
6.9
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.5
0.6
nC
Gate to Source Gate Charge
Q
gs
-
1.7
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
2.2
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 20V, V
GS
= 0V,
f = 1MHz (Figure 12)
-
470
-
pF
Output Capacitance
C
OSS
-
350
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 20A
-
-
1.25
V
I
SD
= 10A
-
-
1.0
V
Reverse Recovery Time
t
rr
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
33
ns
Reverse Recovered Charge
Q
RR
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
30
nC
HUF76009P3, HUF76009D3S
相關(guān)PDF資料
PDF描述
HUF76009D3ST TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA
HUF76009P3 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009P3 RF/Coaxial Connector; RF Coax Type:TNC; Impedance:50ohm; Body Style:Straight Flanged Jack; Body Plating:Nickel RoHS Compliant: Yes
HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
HUF76013P3 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76009D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009P3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76013D3S 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013P3 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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