參數(shù)資料
型號(hào)： HUF76009P3
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： RF/Coaxial Connector; RF Coax Type:TNC; Impedance:50ohm; Body Style:Straight Flanged Jack; Body Plating:Nickel RoHS Compliant: Yes
中文描述： 20 A, 20 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 243K
代理商： HUF76009P3
1
TM
File Number
4861.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
UltraFET is a registered trademark of Intersil Corporation.
HUF76009P3, HUF76009D3S
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Symbol
Packaging
Features
20A, 20V
- r
DS(ON)
= 0.027
,
V
GS
=
10V
- r
DS(ON)
= 0.039
,
V
GS
=
5V
PWM optimized for synchronous buck applications
Fast Switching
Low Gate Charge
- Q
g
Total 11nC (Typ)
Low Capacitance
- C
ISS
470pF (Typ)
- C
RSS
50pF (Typ)
Ordering Information
HUF76009D3S
JEDEC TODD2AA
HUFD76009P3
JEDEC TO-220AB
D
G
S
GATE
SOURCE
DRAIN (FLANGE)
DRAIN
(FLANGE)
GATE
SOUDRAIN
PART NUMBER
PACKAGE
BRAND
HUF76009P3
TO-220AB
76009P
HUF76009D3S
TO-252AA
76009D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
HUF76009P3,
HUF76009D3S
UNITS
V
DSS
V
DGR
V
GS
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k
) (Note 1)
Gate to Source Voltage
20
V
20
±
16
V
V
I
D
I
D
I
DM
P
D
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Pulsed Drain Current
20
16
Figure 4
A
A
A
Power Dissipation
Derate Above 25
o
C
41
0.33
W
W/
o
C
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 150
T
L
T
pkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
o
C
o
C
THERMAL SPECIFICATIONS
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case, TO-220, TO-252
3.04
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient TO-220
62
Thermal Resistance Junction to Ambient TO-252
100
NOTE:
1. T
J
= 25
o
C to 125
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
April 2000
相關(guān)PDF資料
PDF描述
HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
HUF76013P3 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013D3ST TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA
HUF76013P3 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76013D3S 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013P3 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105DK8 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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