參數(shù)資料
型號： HUF76009P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： RF/Coaxial Connector; RF Coax Type:TNC; Impedance:50ohm; Body Style:Straight Flanged Jack; Body Plating:Nickel RoHS Compliant: Yes
中文描述： 20 A, 20 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 8/11頁
文件大?。?/td> 243K
代理商： HUF76009P3
8
SABER Electrical Model
REV 16 March 2000
template huf76009p3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 3.4e-13, rs = 1.0e-2, trs1 = 2e-3, trs2 = 8e-7, cjo = 1.05e-9, tt = 1.18e-8, xti = 5, m = 0.42)
dp..model dbreakmod = (rs = 1.3e-1, trs1 = 0, trs2 = 0)
dp..model dplcapmod = (cjo = 3.2e-10, isl = 10e-30, nl = 10, m = 0.6)
m..model mmedmod = (type=_n, vto = 2.38, kp = 12, is = 1e-30, tox = 1, rs = 0.03)
m..model mstrongmod = (type=_n, vto = 2.87, kp = 28, lambda = 0.02, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.95, kp = 0.08, is = 1e-30, tox = 1, rs = 0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -4.7, voff = -2.0)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.0, voff = -4.7)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.0, voff = 0.3)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.3, voff = -1.0)
c.ca n12 n8 = 5.6e-10
c.cb n15 n14 = 5.0e-10
c.cin n6 n8 = 4.5e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 4.6e-9
l.lsource n3 n7 = 4.7e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 9.7e-4, tc2 = 0
res.rdrain n50 n16 = 1.0e-3, tc1 = 9.8e-3, tc2 = 2.85e-5
res.rgate n9 n20 = 4.0
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 46
res.rlsource n3 n7 = 47
res.rslc1 n5 n51= 1e-6, tc1 = 5e-3, tc2 = 5.05e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.4e-2, tc1 = 1.5e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.68e-3, tc2 = 8e-7
res.rvthres n22 n8 = 1, tc1 = -1.48e-3, tc2 = -5e-6
spe.ebreak n11 n7 n17 n18 = 25.9
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/70))** 3))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76009P3, HUF76009D3S
相關PDF資料
PDF描述
HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場效應管)
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HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013D3ST TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA
HUF76013P3 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
HUF76013D3S 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013P3 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105DK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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