參數(shù)資料
型號(hào): HN29WT800T-10
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁數(shù): 37/43頁
文件大?。?/td> 321K
代理商: HN29WT800T-10
HN29W12811BP Series
37
Unusable Sector
Initially, the HN29W12811 includes unusable sectors. The unusable sectors must be distinguished from the
usable sectors by the system as follows.
1. Check the partial invalid sectors in the devices on the system. The usable sectors were programmed the
following data. Refer to the flowchart “The Unusable Sector Indication Flow”.
Initial Data of Usable Sectors
Column address
0H to 81FH
820H
821H
822H
823H
824H
825H
826H to 83FH
Data
FFH
1CH
71H
C7H
1CH
71H
C7H
FFH
2. Do not erase and program to the partial invalid sectors by the system.
Sector number = 0
Read data
Bad sector*
2
Sector number =
Sector number + 1
Column address = 820H to 825H
Yes
Yes
No
No
Check data*
1
Sector number = 8,191
START
END
Notes: 1. Refer to table "Initial data of usable sectors".
2. Bad sectors are installed in system.
The Unusable Sector Indication
Flow
相關(guān)PDF資料
PDF描述
HN29WT800T-12 x8/x16 Flash EEPROM
HN29WT800T-8 x8/x16 Flash EEPROM
HN2A01FUGR TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2A01FUY TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2A01FU PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WT800T-12 制造商:Renesas Electronics Corporation 功能描述:8MB CMOS FLASH DINOR 1M*8 3.3V
HN29WT800T-8 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN2A01FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications
HN2A01FE-GR(TE85LF 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6
HN2A01FE-Y(TE85L,F 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6