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參數資料
| 型號： | HMMC-5620 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁數： | 2/6頁 |
| 文件大小： | 128K |
| 代理商： | HMMC-5620 |
6-71
HMMC-5620 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
IDD
Drain Current (VDD = +5.0 V)
mA
70
100
135
IDD
Drain Current (VDD = +7.0 V)
mA
105
θ
ch-bs
Thermal Resistance (Tbackside = 25°C)
°C/W
70
Note:
1. Measured in wafer form with Tchuck = 25°C. (Except θch-bs).
HMMC-5620 RF Specifications/Physical Properties
V
DD = 5.0 V, IDD(Q) = 100 mA, Zin =Zo = 50
[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
BW
Guaranteed Bandwidth
GHz
6
20
S21
Small Signal Gain
dB
15
17
21
S
21
Small Signal Gain Flatness
dB
± 1.0
± 1.25
RLin
Input Return Loss
dB
-15
-10
RL out
Output Return Loss
dB
-15
-10
S12
Reverse Isolation
dB
-55
P-1dB
Output Power @ 1 dB Gain Compression
dBm
12
Psat
Saturated Output Power
dBm
13
H2
Second Harmonic Power Level (6 < o < 20)
dBc
-30
Po(o) = 10 dBm
H3
Third Harmonic Power Level (6 < o < 20)
dBc
-40
Po(o) = 10 dBm
NF
Noise Figure
dB
9.0
Note:
1. Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package at TA = 25°C.
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