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參數(shù)資料
| 型號： | HMMC-5620 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | HMMC-5620 |
6-70
6 – 20 GHz High-Gain Amplifier
Technical Data
Features
Wide-Frequency Range:
6 – 20 GHz
High Gain: 17 dB
Gain Flatness:
± 1.0 dB
Return Loss:
Input
-15 dB
Output -15 dB
Single Bias Supply
Operation
Low DC Power Dissipation:
PDC ~ 0.5 Watts
Medium Power:
20 GHz: P-1dB: 12 dBm
Psat: 13 dBm
Description
The HMMC-5620 is a wideband
GaAs MMIC Amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply offers
ease of use. E-Beam lithography
is used to produce gate lengths of
≈ 0.3 m. The HMMC-5620 incor-
porates advanced MBE technol-
ogy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Positive Drain Voltage
V
7.5
IDD
Total Drain Current
mA
135
PDC
DC Power Dissipation
watts
1.0
Pin
CW Input Power
dBm
20
Tch
Operating Channel Temp.
°C
+160
Tcase
Operating Case Temp.
°C
-55
TSTG
Storage Temperature
°C
-65
+165
Tmax
Maximum Assembly Temp.
°C
+300
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. TA = 25°C except for Tch, TSTG, and Tmax.
Chip Size:
1410 x 1010
m (55.5 x 39.7 mils)
Chip Size Tolerance:
± 10m(± 0.4mils)
Chip Thickness:
127
± 15m(5.0± 0.6mils)
Pad Dimensions:
80 x 80
m (2.95 x 2.95 mils), or larger
HMMC-5620
5965-5442E
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