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參數(shù)資料
| 型號： | HMMC-5026 |
| 英文描述： | 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier(2-26.5 GHz砷化鎵單片微波集成電路行波放大器) |
| 中文描述： | 2-26.5千兆赫砷化鎵單片行波放大器（2-26.5千兆赫砷化鎵單片微波集成電路行波放大器） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 99K |
| 代理商： | HMMC-5026 |
3
Applications
The HMMC-5021/22/26 series of
traveling wave amplifiers are
designed for use as general
purpose wideband gain blocks in
communication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are de-
signed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
DD
) and a single negative gate
supply (V
G1
). The recommended
bias conditions for the
HMMC-5021/22/26 are V
DD
= 7.0V,
I
DD
= 150 mA for best overall
performance. To achieve this
drain current level, V
G1
is typi-
cally biased between -0.2V and
-0.5V. No other bias supplies or
connections to the device are
required for 2 to 26.5 GHz opera-
tion. See Figure 3 for assembly
information.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below
≈
1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V
G2
) can be
used to obtain 35 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias voltage is
≈
+2.1 V.
Applying an external bias
between its open-circuit voltage
and -2.5 volts will adjust the gain
while maintaining a good
input/output port match.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2
°
C,
and ultrasonic power and dura-
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see Agilent application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Figure 1. HMMC-5021/22/26 Schematic.
Aux. Drain
Drain Bias
(V
DD
)
RF Input
Single Stage Shown
Temp
Diode
Sense
Temp
Diode
Force
First Gate
Bias (V
G1
)
Second Gate
Bias (V
G2
)
RF Output
Aux. Gate
Note:
FET gate periphery in microns.
Seven Identical Stages
124
124
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5021 | 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器) |
| HMMC-5023 | 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器) |
| HMMC-5025 | 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器) |
| HMMC-5027 | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| HMMC-5032 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
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