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參數(shù)資料
| 型號： | HMMC-5026 |
| 英文描述： | 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier(2-26.5 GHz砷化鎵單片微波集成電路行波放大器) |
| 中文描述： | 2-26.5千兆赫砷化鎵單片行波放大器（2-26.5千兆赫砷化鎵單片微波集成電路行波放大器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 99K |
| 代理商： | HMMC-5026 |
2
HMMC-5021/22/26 DC Specifications/Physical Properties,
[1]
applies to all part numbers
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
DSS
Saturated Drain Current
(V
DD
= 7.0V, V
G1
= 0V, V
G2
= open circuit)
First Gate Pinch-off Voltage
(V
DD
= 7.0V, I
DD
= 16 mA, V
G2
= open circuit)
Second Gate Self-Bias Voltage
(V
DD
= 7.0 V, V
G1
= 0 V)
First Gate Pinch-off Current
(V
DD
= 7.0 V, V
G1
= -3.5 V, V
G2
= open circuit)
Second Gate Pinch-Off Current
(V
DD
= 5.0 V, V
G1
= 0 V, V
G2
= -3.5 V)
Thermal Resistance
(T
backside
= 25
°
C)
mA
115
180
250
V
p
V
-3.5
-1.5
-0.5
V
G2
V
2.1
I
DSOFF
(V
G1
)
I
DSOFF
(V
G2
)
mA
4
mA
8
θ
ch-bs
°
C/W
36
Note:
1. Measured in wafer form with T
chuck
= 25
°
C. (Except
θ
ch-bs
.)
HMMC-5021/22/26 RF Specifications,
V
DD
= 7.0 V, I
DD
(Q) = 150 mA, Z
in
= Z
o
= 50
[1]
2.0–22.0 GHz
2.0–26.5 GHz
HMMC-5026
Min.
Typ.
2
7.5
±
0.75
10
10
20
12
14
Symbol
Parameters/Conditions
Units
HMMC-5021
HMMC-5022
Typ.
Typ.
2-22
10
±
0.5
16
13
32
18
20
Min.
2
8.0
Max.
22
12
±
1.0
Max.
26.5
12
±
1.0
BW
S
21
S
21
RL
in(min)
RL
out(min)
Isolation
P
-1dB
P
sat
Guaranteed Bandwidth
Small Signal Gain
Small Signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Minimum Reverse Isolation
Output Power at 1 dB Gain Comp.
Saturated Output Power
Max. Second Harm. (2 <
o
<20),
[P
o
(
o
) = 17 dBm or P
-1dB
,
whichever is less.]
Max. Third Harm. (2 <
o
< 20),
[P
o
(
o
) = 17 dBm or P
-1dB
,
whichever is less.]
Noise Figure
GHz
dB
dB
dB
dB
dB
dBm
dBm
10
±
0.5
16
13
32
18
20
9.5
10
10
20
15
17
14
13
30
15
17
H
2(max)
dBc
-25
-25
-20
-25
-20
H
3(max)
dBc
-34
-34
-20
-34
-20
NF
dB
8
8
10
Notes:
1. Small-signal data measured in wafer form with T
chuck
= 25
°
C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package @ T
A
= 25
°
C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB
corner frequency
≈
29.5 GHz.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5021 | 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器) |
| HMMC-5023 | 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器) |
| HMMC-5025 | 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器) |
| HMMC-5027 | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| HMMC-5032 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
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