參數(shù)資料
型號(hào)： HMMC-5021
英文描述： 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器)
中文描述： 2-22千兆赫砷化鎵單片行波放大器（2-22千兆赫砷化鎵單片微波集成電路行波放大器）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 99K
代理商： HMMC-5021
2–26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Technical Data
Features
Wide-Frequency Range:
2 - 26.5 GHz
High Gain:
9.5 dB
Gain Flatness:
0.75 dB
Return Loss:
Input: -14 dB
Output: -13 dB
Low-Frequency Operation
Capability:
< 2 GHz
Gain Control:
35 dB Dynamic Range
Moderate Power:
20 GHz:P
-1dB
: 18 dBm
P
sat
:
26.5 GHz: P
-1dB
: 15 dBm
P
sat
: 17 dBm
20 dBm
Description
The HMMC-5021/22/26 is a
broadband GaAs MMIC Traveling
Wave Amplifier designed for high
gain and moderate output power
over the full 2 to 26.5 GHz fre-
quency range. Seven MESFET
cascode stages provide a flat gain
response, making the
HMMC-5021/22/26 an ideal
wideband gain block. Optical
lithography is used to produce
gate lengths of
≈
0.4
μ
m. The
HMMC-5021/22/26 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
HMMC-5021 ( 2-22 GHz)
HMMC-5022 ( 2-22 GHZ)
HMMC-5026 ( 2-26.5 GHz)
Absolute Maximum Ratings
Symbol
Parameters/Conditions
V
DD
Positive Drain Voltage
I
DD
Total Drain Current
V
G1
First Gate Voltage
I
G1
First Gate Current
V
G2[2]
Second Gate Voltage
I
G2
Second Gate Current
P
DC
DC Power Dissipation
P
in
CW Input Power
T
ch
Operating Channel Temp.
T
case
Operating Case Temp.
T
STG
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25
°
C except for T
ch
, T
STG
, and T
max
.
2. Minimum voltage on V
G2
must not violate the following: V
G2
(min) > V
DD
- 9 volts.
Units
V
Min.
Max.
[1]
8.0
mA
250
V
-5
0
mA
-9
+5
V
-2.5
+3.5
mA
-7
watts
2.0
dBm
°
C
°
C
°
C
23
+150
-55
-65
+165
T
max
°
C
+300
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 770
μ
m (117.3 x 30.3 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
75 x 75
μ
m (2.95 x 2.95 mils), or larger
相關(guān)PDF資料
PDF描述
HMMC-5023 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器)
HMMC-5025 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器)
HMMC-5027 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）)
HMMC-5032 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器)
HMMC-5033 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMMC-5022 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 22GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:ML-GAAS ATTEN CHIP
HMMC-5023 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5025 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5026 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5027 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film
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