參數(shù)資料
型號: HMMC-5021
英文描述: 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器)
中文描述: 2-22千兆赫砷化鎵單片行波放大器(2-22千兆赫砷化鎵單片微波集成電路行波放大器)
文件頁數(shù): 4/6頁
文件大小: 99K
代理商: HMMC-5021
4
Figure 2. HMMC-5021/22/26 Bonding Pad Locations.
Figure 3. HMMC-5021/22/26 Assembly Diagram.
Note:
Total offset between RF input
and RF output pad is 335
μ
m
(13.2 mils).
V
DD
(V
DD
and Aux Drain Pads)
(V
G2
Pad)
80
490
(RF Input Pad)
Aux.
Drain
RF
Input
85
80
Chip ID No.
Temp. Diode Sense
Aux. Gate
Temp.
Diode Force
V
G1
V
G2
RF
Output
225
225
770
(
±
10
μ
m)
300
80
560
(RF Output Pad)
75
75
270
1695
695
2980 (
±
10
μ
m)
200
200
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75
μ
m.
Octagonal Pad Dim: 90
μ
m dia.
All other dimensions
±
5
μ
m
(unless otherwise noted).
Chip thickness: 127
±
15
μ
m.
V
DD
V
G1
OUT
IN
1.5 mil dia.Gold Wire
Bond to
15 nF
DC Feedthru
4 nH Inductor
(0.7 mil Gold Wire Bond
with length
150 mils)
0.7 mil dia. Gold Bond Wire
(Length NOT important)
Gold Plated Shim
2.0 mil
nom. gap
68 pF Capacitor
Input and Output Thin Film
Circuit with
8 pF
DC Blocking Capacitor
2.0 mil
nom. gap
Trace Offset
168
μ
m
(6.6 mils)
1.5 mil dia.Gold Wire
Bond to
15 nF DC Feedthru
Bonding Island
Trace Offset
168
μ
m
(6.6 mils)
相關(guān)PDF資料
PDF描述
HMMC-5023 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器)
HMMC-5025 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器)
HMMC-5027 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器(用于中等功率))
HMMC-5032 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器)
HMMC-5033 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器)
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