- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370642 > HMMC-5004 3 GHz Wideband Power Amplifier(3 GHz寬帶功率放大器) PDF資料下載
參數(shù)資料
| 型號： | HMMC-5004 |
| 英文描述： | 3 GHz Wideband Power Amplifier(3 GHz寬帶功率放大器) |
| 中文描述： | 3 GHz的寬帶功率放大器（3 GHz的寬帶功率放大器） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 80K |
| 代理商： | HMMC-5004 |
3
Figure 1. HMMC-5004 Schematic.
Applications
The HMMC-5004 is designed for
use as a broadband power
amplifier in communication
systems and microwave instru-
mentation. It is ideally suited for
100 kHz to 3 GHz applications
where high output power, flat
gain and low distortion are
required.
Biasing
This device should be biased such
that V
SS
= -5V, V
D1
= V
D3
= +8V,
and V
D2
= +5V. This may be
accomplished in several ways.
Three separate supplies may be
used to directly provide the
required voltages. Alternatively,
two supplies (-5, +8V) may be
used. In the latter case, the +5V
bias for V
D2
may be derived from
the +8 supply with a variable
resistor or regulator.
In addition to applying the proper
voltages to the device, the off-
chip impedances presented to
V
SS
, V
D2
, and V
D3
must be con-
trolled. In particular, the V
SS
pad
must be bypassed to provide an
RF ground while V
D2
and V
D3
must be biased through a high
impedance across the desired
operating frequency range. This
high impedance bias may be
accomplished using chokes,
active loads, or a combination of
these components. V
D1
bypassing
is not critical.
To prevent damage to the device,
the V
SS
supply should be turned
on before the positive supplies
during power up, and turned off
after the positive supplies during
power down. V
SS
must never be
open circuited during operation.
The input and output of the
HMMC-5004 are DC coupled. The
input pad will float at -5V while
the output pad is used to provide
the V
D3
bias and as a result will be
at +8V. To prevent the distur-
bance of internal bias nodes, DC
blocking capacitors must be used
on the input and output. The pads
labelled VTH, M1, M2, and M3 are
internal voltage monitor points
and may be ignored.
Assembly Techniques
Solder die attach using a AuSn
solder preform is the recom-
mended assembly method. Gold
thermosonic wedge bonding with
0.7 mil wire is recommended for
all bonds. Tool force should be
22 grams
±
1 gram, stage tempera-
ture is 150
±
2
°
C, and ultrasonic
power of 64
±
1 dB and 76
±
8 msec, respectively. The top and
bottom metallization is gold.
For more detailed information
see Agilent application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
V
D1
V
D2
V
D3
M1
RF
INPUT
RF
OUTPUT
M2
M3
7K
3K
10
40
7 diodes
Notes:
FET gate periphery in microns.
All resistors in ohms (
) or in K-ohms, where indicated.
700
11
1200
1 nH
1.2 nH
200
7K
20 pF
1 nH
6.4K
4
2000
400
1.2 nH
51
V
SS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5022 | 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器) |
| HMMC-5026 | 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier(2-26.5 GHz砷化鎵單片微波集成電路行波放大器) |
| HMMC-5021 | 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器) |
| HMMC-5023 | 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器) |
| HMMC-5025 | 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5021 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 22GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5022 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 22GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:ML-GAAS ATTEN CHIP |
| HMMC-5023 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。