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參數資料
| 型號： | HMC-ALH216 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 14000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.25 X 1.58 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 184K |
| 代理商： | HMC-ALH216 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
v03.0209
General Description
Features
Functional Diagram
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Electrical Specifications*
, T
A = +25° C, Vdd= +4V
Typical Applications
This HMC-ALH216 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
Test Instrumentation
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is
ideal
for
integration
into
Multi-Chip-Modules
(MCMs) due to its small size.
HMC-ALH216
Parameter
Min.
Typ.
Max.
Units
Frequency Range
14 - 27
GHz
Gain
14
18
dB
Gain Variation over Temperature
0.02
dB / °C
Noise Figure
2.7
4.5
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)
90
mA
*Unless otherwise indicated, all measurements are from probed die
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相關代理商/技術參數 |
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| HMC-ALH216-E | 功能描述:RF Amplifier IC General Purpose 14GHz ~ 27GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):過期 頻率:14GHz ~ 27GHz P1dB:14dBm 增益:18dB 噪聲系數:2.7dB RF 類型:通用 電壓 - 電源:4V 電流 - 電源:90mA 測試頻率:14GHz ~ 27GHz 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:1 |
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| HMC-ALH244_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz |
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