參數(shù)資料
型號(hào): HMC-ALH382
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 57000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 1.55 X 0.73 MM, 0.10 MM HEIGHT, DIE-4
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 443K
代理商: HMC-ALH382
A
m
p
li
f
ie
r
s
-
l
o
w
n
o
is
e
-
C
h
ip
1
1 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
v03.1210
General Description
Features
Functional Diagram
noise figure: 3.8 dB
p1dB: +12 dBm
Gain: 21 dB
supply Voltage: +2.5V
50 ohm matched input/output
Die size: 1.55 x 0.73 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd = 2.5V, Idd = 64 mA*
Typical Applications
This hmC-Alh382 is ideal for:
Short Haul / High Capacity Links
Wireless LANs
Military & Space
The hmC-Alh382 is a high dynamic range, four
stage GaAs hemT mmiC low noise Amplifier
(lnA) which operates between 57 and 65 Ghz. The
hmC-Alh382 features 21 dB of small signal gain,
4 dB of noise figure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile lnA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 ohm environment and
contacted with rf probes.
HMC-ALH382
parameter
min.
Typ.
max.
Units
frequency range
57 - 65
Ghz
Gain
19
21
dB
noise figure
4
5.5
dB
input return loss
12
dB
output return loss
10
dB
output power for 1 dB Compression (p1dB)
12
dBm
supply Current (idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
64
100
mA
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve iddtotal = 64 mA
相關(guān)PDF資料
PDF描述
HMC-ALH435 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC-ALH482 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC-APH460 27000 MHz - 31500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC-APH462 15000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC-APH596 16000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC-ALH382_11 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
HMC-ALH435 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
HMC-ALH435-SX 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:5GHz ~ 20GHz P1dB:16dBm 增益:13dB 噪聲系數(shù):2.2dB RF 類型:VSAT,DBS 電壓 - 電源:5V 電流 - 電源:30mA 測(cè)試頻率:5GHz ~ 20GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2
HMC-ALH444 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
HMC-ALH444_10 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz