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參數資料
| 型號： | HMC-APH596 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 16000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.55 X 1.87 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 208K |
| 代理商： | HMC-APH596 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 16 - 33 GHz
v02.0208
General Description
Functional Diagram
Output IP3: +33 dBm
P1dB: +24 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.55 x 1.87 x 0.1 mm
Typical Applications
This HMC-APH596 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
The HMC-APH596 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 16 and 33 GHz. The HMC-APH596 provides
17 dB of gain, and an output power of +24 dBm at
1 dB compression from a +5V supply voltage. All
bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH596 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wirebonding, making it ideal
for MCM and hybrid microcircuit applications. All
data Shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes.
HMC-APH596
Electrical Specifications
, T
A = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA
[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
16 - 33
GHz
Gain
16
17
dB
Input Return Loss
17
dB
Output Return Loss
18
dB
Output power for 1dB Compression (P1dB)
24
dBm
Output Third Order Intercept (IP3)
33
dBm
Supply Current (Idd1+Idd2)
400
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd
total = 400 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC-APH596-SX | 功能描述:RF Amplifier IC VSAT, DBS 16GHz ~ 33GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:16GHz ~ 33GHz P1dB:24dBm 增益:17dB 噪聲系數:- RF 類型:VSAT，DBS 電壓 - 電源:5V 電流 - 電源:400mA 測試頻率:16GHz ~ 33GHz 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2 |
| HMC-APH608 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 22.5 - 26.5 GHz |
| HMC-APH608-SX | 功能描述:IC MMIC POWER AMP DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:22.5GHz ~ 26.5GHz P1dB:30dBm 增益:17dB 噪聲系數:- RF 類型:VSAT，DBS 電壓 - 電源:5V 電流 - 電源:950mA 測試頻率:22.5GHz ~ 26.5GHz 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2 |
| HMC-APH633 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz |
| HMC-APH634 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz |
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