參數(shù)資料
型號(hào): HM5225805BTT-A6
廠(chǎng)商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述: 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 29/63頁(yè)
文件大?。?/td> 462K
代理商: HM5225805BTT-A6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Data Sheet E0082H10
29
Read command to Write command interval:
1. Same bank, same ROW address:
When the write command is executed at the same ROW address of the
same bank as the preceding read command, the write command can be performed after an interval of no less
than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z
before data input.
READ to WRITE Command Interval (1)
CLK
Command
Dout
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
Din
CL=2
CL=3
DQM,
DQMU
/DQML
Burst Length = 4
Burst write
READ to WRITE Command Interval (2)
CLK
Command
Dout
READ
WRIT
Din
CL=2
CL=3
DQM,
DQMU/DQML
High-Z
2 clock
High-Z
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the write command can be performed after an interval of no less
than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must
be set High so that the output buffer becomes High-Z before data input.
相關(guān)PDF資料
PDF描述
HM5225405BTT-A6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
HM5225645F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
HM5225325F 256-Mbit SDRAM(256M位同步RAM)
HM5225645F 256-Mbit SDRAM(256M位同步RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5225805BTT-B6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM-523841-1.5-8A 功能描述:電線(xiàn)鑒定 HM 2.06/3.31" LABEL PRICE PER LABEL RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類(lèi)型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長(zhǎng)度:1 in
HM5241605 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Series 131 072-Word x 16-Bit x 2-Bank Synchronous Dynamic RAM
HM5241605C 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Series 4M LVTTL Interface SDRAM (128-kword x 16-bit) 83 MHz/80MHz/66
HM5241605CJ-12 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x16 SDRAM