參數(shù)資料
型號(hào): HB52F168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 57/71頁(yè)
文件大小: 906K
代理商: HB52F168EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
57
DQMB Control
The DQMB mask the DQ data. The timing of DQMB is different during reading and writing.
Reading:
When data is read, the output buffer can be controlled by DQMB. By setting DQMB to Low, the
output buffer becomes Low-Z, enabling data output. By setting DQMB to High, the output buffer becomes
High-Z, and the corresponding data is not output. However, internal reading operations continue. The laten-
cy of DQMB during reading is 2 clocks.
Writing:
Input data can be masked by DQMB. By setting DQMB to Low, data can be written. In addition,
when DQMB is set to High, the corresponding data is not written, and the previous data is held. The latency
of DQMB during writing is 0 clock.
Reading
CK
Command
Address
Mode
Register Set
Bank
Active
MRS
ACTV
I
RSA
BS & ROW
CODE
CK
Dout
out 0
out 1
l = 2 Latency
out 3
DQMB
High-Z
相關(guān)PDF資料
PDF描述
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
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