參數(shù)資料
型號: HB52F168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 23/71頁
文件大小: 906K
代理商: HB52F168EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
23
DC Characteristics (Ta = 0 to 65
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
(HB52F88EM)
Notes:
1.I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2.One bank operation.
3.Input signals are changed once per one clock.
4.Input signals are changed once per two clocks.
5.Input signals are changed once per four clocks.
6.After power down mode, CK operating current.
7.After power down mode, no CK operating current.
8.After self refresh mode set, self refresh current.
HB52F88EM-75F
PC133
CE latency = 3
PC100
CE latency = 2
Parameter
Operating current
Sym-
bol
I
CC1
Min
Max
640
Min
Max
640
Unit Test conditions
mA
Burst length = 1
t
RC
= min
mA
CKE = V
IL
, t
CK
= 12
ns
mA
CKE = V
IL
, t
CK
=
Note
s
1, 2, 3
Standby current in power
down
Standby current in power
down
(input signal stable)
Standby current in non
power down
Active standby current in
power down
Active standby current in
non power down
Burst operating current
Refresh current
Self refresh current
I
CC2P
24
24
6
I
CC2PS
16
16
7
I
CC2N
128
128
mA
CKE, S = V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE, S = V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
t
RC
= min
V
IH
V
CC
– 0.2 V
V
IL
0.2 V
0
Vin
V
CC
0
Vout
V
CC
DQ = disable
I
OH
= –4 mA
I
OL
= 4 mA
4
I
CC3P
32
32
mA
1, 2, 6
I
CC3N
160
160
mA
1, 2, 4
I
CC4
I
CC5
I
CC6
800
920
8
640
920
8
mA
mA
mA
1, 2, 5
3
8
Input leakage current
Output leakage current
I
LI
I
LO
–10
–10
10
10
–10
–10
10
10
μ
A
μ
A
Output high voltage
Output low voltage
V
OH
V
OL
2.4
0.4
2.4
0.4
V
V
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