參數(shù)資料
型號： HB52E649EN
廠商： Hitachi,Ltd.
英文描述： 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述： 512 MB的無緩沖SDRAM的內存（512 MB的未緩沖同步的DRAM內存）
文件頁數(shù)： 9/29頁
文件大?。?/td> 134K
代理商： HB52E649EN
HB52E648EN/HB52E649EN-A6B/B6B
9
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
17
SDRAM device attributes:
number of banks on SDRAM
device
0
0
0
0
0
1
0
0
04
4
18
SDRAM device attributes:
CE
latency
0
0
0
0
0
1
1
0
06
2, 3
19
SDRAM device attributes:
S
latency
0
0
0
0
0
0
0
1
01
0
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM module attributes
0
0
0
0
0
0
0
0
00
Non buffer
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
±
10%
23
SDRAM cycle time
(2nd highest
CE
latency)
(-A6B) 10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
SDRAM cycle time
(2nd highest
CE
latency)
(-B6B) 15 ns
1
1
1
1
0
0
0
0
F0
24
SDRAM access from Clock
(2nd highest
CE
latency)
(-A6B) 6 ns
0
1
1
0
0
0
0
0
60
CL = 2
SDRAM access from Clock
(2nd highest
CE
latency)
(-B6B) 9 ns
1
0
0
1
0
0
0
0
90
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
26
SDRAM access from Clock
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time 0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min 0
RE
to
CE
delay min
Minimum
RE
pulse width
0
0
1
0
1
0
0
14
20 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
1
0
0
1
0
32
50 ns
31
Density of each bank on
module
0
1
0
0
0
0
0
0
40
2 bank
256 M byte
32
Address and command
signal input setup time
0
0
1
0
0
0
0
0
20
2.0 ns
33
Address and command
signal input hold time
0
0
0
1
0
0
0
0
10
1.0 ns
34
Data signal input setup time
0
0
1
0
0
0
0
0
20
2.0 ns
相關PDF資料
PDF描述
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F169E1 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
相關代理商/技術參數(shù)
參數(shù)描述
HB52E649EN-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E649EN-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E88EM-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52E89E1P-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E89EM-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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