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參數(shù)資料
| 型號： | GT25C32-2UDLI-TR |
| 廠商： | GIANTEC SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 4K X 8 SPI BUS SERIAL EEPROM, DSO8 |
| 封裝： | 2 X 3 MM, GREEN, MO-229, DFN-8 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大小： | 781K |
| 代理商： | GT25C32-2UDLI-TR |
Integrated Silicon Solution, Inc. — www.issi.com
13
Advanced Information Rev. 00C
07/16/09
IS25C32B
ORDERINg INFORMATION
Industrial Range: -40°C to +85°C, Lead-free
Voltage
Range
Part Number
Package (8-pin)*
1.8V
IS25C32B-2GLI
150 mil SOIC (JEDEC STD)
to 5.5V
IS25C32B-2ZLI
3 x 4.4 mm TSSOP
IS25C32B-2PLI
Plastic DIP
IS25C32B-2DLI-TR 2 x 3 mm DFN
*
1. Contact ISSI Sales Representatives for availability and other package information.
2. Most listed part numbers are packed in tube, except DFN in tape and reel “-TR”.
3. For tape and reel, add “-TR” at the end of the P/N (4K per reel). DFN is 5K per reel.
4. Refer to ISSI website for related declaration document on lead free, RoHS, halogen free, or Green, whichever is applicable.
5. ISSI offers Industrial grade for Commercial applications (0oC to +70oC).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GT25G101 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
| GT25G101(Q) | 功能描述:IGBT 晶體管 IGBT 400V 170A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| GT25G101(SM) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 25A I(C) | TO-263VAR |
| GT25G101_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
| GT25G101SM | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
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