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參數(shù)資料
| 型號(hào)： | GT25C32-2UDLI-TR |
| 廠商： | GIANTEC SEMICONDUCTOR INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4K X 8 SPI BUS SERIAL EEPROM, DSO8 |
| 封裝： | 2 X 3 MM, GREEN, MO-229, DFN-8 |
| 文件頁(yè)數(shù)： | 16/18頁(yè) |
| 文件大?。?/td> | 781K |
| 代理商： | GT25C32-2UDLI-TR |
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Integrated Silicon Solution, Inc. — www.issi.com
7
Advanced Information Rev. 00C
07/16/09
IS25C32B
ABSOLUTE MAXIMUM RATINgS(1)
Symbol Parameter
Value
Unit
Vs
Supply Voltage
-0.5 to + 6.5
V
Vp
Voltage on Any Pin
–0.5 to Vcc + 0.5
V
Tbias
Temperature Under Bias
–55 to +125
°C
TsTg
Storage Temperature
–65 to +150
°C
iouT
Output Current
5
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions outside those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATINg RANgE (IS25C32B-2)
Vcc
Ambient Temperature
grade
1.8V to 5.5V
–40°C to +85°C
Industrial
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
cin
Input Capacitance
Vin = 0V
6
pF
couT
Output Capacitance
VouT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters and not
100% tested.
2. Test conditions: Ta = 25°c, f = 1 MHz, Vcc = 5.0V.
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