參數(shù)資料
型號(hào): GS882V37BB
廠商: GSI TECHNOLOGY
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 9/27頁(yè)
文件大?。?/td> 727K
代理商: GS882V37BB
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
GS882V37BB/D-360/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 3/2005
9/27
2003, GSI Technology
Simplified State Diagram
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參數(shù)描述
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