- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384358 > GS882V37BB (GSI TECHNOLOGY) 256K x 36 9Mb SCD/DCD Sync Burst SRAM PDF資料下載
參數(shù)資料
| 型號： | GS882V37BB |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| 中文描述： | 256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 12/27頁 |
| 文件大?。?/td> | 727K |
| 代理商： | GS882V37BB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
GS882V37BB/D-360/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 3/2005
12/27
2003, GSI Technology
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
I/O Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1, 2
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1, 2
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1, 2, 3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1, 2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS882Z18AB | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS882Z18AB-133 | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS882Z18AB-133I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS882Z18AB-150 | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS882Z18AB-150I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS882V37BB-133I | 制造商:GSI Technology 功能描述:256KX36(9 MEG)SYNCH BURST,"+1 SERIES" SCD, JTAG, FLEXDRIVE - Trays |
| GS882V37BB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 2.2NS 119FBGA - Trays |
| GS882V37BB-300I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 2.2NS 119FBGA - Trays |
| GS882V37BGB-200 | 制造商:GSI Technology 功能描述:256KX36(9 MEG)SYNCH BURST,"+1 SERIES" SCD, JTAG, FLEXDRIVE - Trays |
| GS882V37BGB-200I | 制造商:GSI Technology 功能描述:256KX36(9 MEG)SYNCH BURST,"+1 SERIES" SCD, JTAG, FLEXDRIVE - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。