參數(shù)資料
型號: GS882V37BB
廠商: GSI TECHNOLOGY
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 15/27頁
文件大?。?/td> 727K
代理商: GS882V37BB
AC Electrical Characteristics
Parameter
Symbol
-360
-333
-300
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
2.8
3.0
3.3
ns
Clock to Output Valid
tKQ
1.8
2.0
2.2
ns
Clock to Output Invalid
tKQX
1.0
1.0
1.0
ns
Clock to Output in Low-Z
tLZ
1
1.0
1.0
1.0
ns
Setup time
tS
1.0
1.0
1.1
ns
Hold time
tH
0
0
0.1
ns
G to Output Valid
tOE
1.8
2.0
2.2
ns
G to output in High-Z
tOHZ
1
1.8
2.0
2.2
ns
Clock HIGH Time
tKH
1.2
1.3
1.3
ns
Clock LOW Time
tKL
1.4
1.5
1.5
ns
Clock to Output in
High-Z
tHZ
1
1.0
1.8
1.0
2.0
1.0
2.2
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
GS882V37BB/D-360/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 3/2005
15/27
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
PDF描述
GS882Z18AB 9Mb Pipelined and Flow Through Synchronous NBT SRAM
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