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參數(shù)資料
| 型號(hào)： | GM71S4400CJ-70 |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | GM71S4400CJ-70 |
LG Semicon
GM71C(S)4400C/CL
Read- Modify-Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
Read-Modify-Write Cycle Time
150
-
180
-
200
-
ns
RAS to WE Delay Time
80
-
95
-
105
-
ns
CAS to WE Delay Time
35
-
45
-
45
-
ns
Column Address to WE Delay Time
50
-
60
-
65
-
ns
10
10
10
6
OE Hold Time from WE
15
-
20
-
20
-
ns
Refresh Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
CSR
CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
10
-
10
-
10
-
ns
t
CHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
10
-
10
-
10
-
ns
t
RPC
t
CPN
RAS Precharge to CAS Hold Time
10
-
10
-
10
-
ns
CAS Precharge Time in Normal Mode
10
-
10
-
10
-
ns
Fast Page Mode Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
PC
t
CP
t
RASP
t
ACP
t
RHCP
t
CPW
Fast Page Mode Cycle Time
40
-
45
-
50
-
ns
Fast Page Mode CAS Precharge Time
100,000
100,000
100,000
ns
Fast Page Mode RAS Pulse Width
-
35
-
40
-
45
ns
Access Time from CAS Precharge
ns
RAS Hold Time from CAS Precharge
35
-
40
-
45
-
ns
12
3,13,17
10
10
10
-
-
-
-
-
-
Fast Page Mode Read-Modify-Write Cycle
CAS Precharge to WE Delay Time
55
-
65
-
70
-
ns
t
PRWC
Fast Page Mode Read-Modify-Write Cycle
Time
80
-
95
-
100
-
ns
10
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM71C4400CLJ-60 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CLJ-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GMA01 | Very High-Speed Switching, Bias Stabilizing Applications |
| GMA01U | Very High-Speed Switching, Bias Stabilizing Applications |
| GMA02 | Very High-Speed Switching Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM71V17403CLT-6 | 制造商:Hyundai 功能描述:4M X 4 EDO DRAM, 60 ns, PDSO24 |
| GM71V18160CT-6 | 制造商:Hynix Semi 功能描述: |
| GM71VS16163CLT-60 | 制造商:Logical Devices 功能描述: |
| GM71VS18163CLT-6 | 制造商:HYUNDAI 功能描述:1M X 16 EDO DRAM, 60 ns, PDSO44 |
| GM71VS18163CLT-60 | 制造商:Hyundai 功能描述: |
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