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參數(shù)資料
| 型號： | GM71S4400CJ-70 |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | GM71S4400CJ-70 |
GM71C(S)4400C/CL
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Description
The GM71C(S)4400C/CL is the new generation
dynamic RAM organized 1,048,576 words x 4 bit.
GM71C(S)4400C/CL has realized higher density,
higher performance and various functions by
utilizing advanced CMOS process technology. The
GM71C(S)4400C/CL offers Fast Page Mode as a
high speed access Mode. Multiplexed address
inputs permit the GM71C(S)4400C/CL to be
packaged in a standard 300mil 20(26) pin plastic
SOJ and standard 300mil 20(26) pin plastic
TSOP II. The package size provides high system
bit densities and is compatible with widely
available
automated
equipment. System oriented features include single
power supply of 5V+/-10% tolerance, direct
interfacing capability with high performance logic
families such as Schottky TTL.
testing
and
insertion
Features
* 1,048,576 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
GM71C(S)4400C/CL-60
GM71C(S)4400C/CL-70
GM71C(S)4400C/CL-80
t
RAC
t
CAC
t
RC
t
PC
60
70
80
15
20
20
110
130
150
40
45
50
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
1.1mW (L-version)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 1024 Refresh Cycles/16ms
* 1024 Refresh Cycles/128ms (L-version)
* Battery Back Up Operation (L-version)
(Unit: ns)
1
Pin Configuration
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
6
7
8
9
10
11
12
13
14
15
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
20 (26) SOJ
(Top View)
20 (26) TSOP II
(Top View)
LG Semicon Co.,Ltd.
1
2
3
4
5
16
17
18
19
20
6
7
8
9
10
11
12
13
14
15
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
1
2
3
4
5
16
17
18
19
20
6
7
8
9
10
11
12
13
14
15
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
NORMAL TYPE
REVERSE TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM71C4400CLJ-60 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CLJ-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GMA01 | Very High-Speed Switching, Bias Stabilizing Applications |
| GMA01U | Very High-Speed Switching, Bias Stabilizing Applications |
| GMA02 | Very High-Speed Switching Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM71V17403CLT-6 | 制造商:Hyundai 功能描述:4M X 4 EDO DRAM, 60 ns, PDSO24 |
| GM71V18160CT-6 | 制造商:Hynix Semi 功能描述: |
| GM71VS16163CLT-60 | 制造商:Logical Devices 功能描述: |
| GM71VS18163CLT-6 | 制造商:HYUNDAI 功能描述:1M X 16 EDO DRAM, 60 ns, PDSO44 |
| GM71VS18163CLT-60 | 制造商:Hyundai 功能描述: |
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