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參數(shù)資料
| 型號(hào)： | GM71C4400CJ-70 |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | GM71C4400CJ-70 |
LG Semicon
GM71C(S)4400C/CL
7
Test Mode Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
WS
t
WH
Test Mode WE Setup Time
0
-
0
-
0
-
ns
Test Mode WE Hold Time
10
-
10
-
10
-
ns
Counter Test Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
CPT
CAS Precharge Time in Counter Test
Cycle
40
-
40
-
40
-
ns
AC Measurements assume t
T
= 5
ns
.
Assumes that t
RCD
<=t
RCD
(max) and t
RAD
<=t
RAD
(max). If t
RCD
or t
RAD
is greater than the maximum
recommended value shown in this table, t
RAC
exceeds the value shown.
Measured with a load circuit equivalent to 2TTL loads and 100
§ü
.
Assumes that t
RCD
>=t
RCD
(max) and t
RAD
<=t
RAD
(max).
Assumes that t
RCD
<=t
RCD
(max) and t
RAD
>=t
RAD
(max).
t
OFF
(max) defines the time at which the output achieves the open circuit condition and is not
referenced to output voltage levels.
V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Also,
transition times are measured between V
IH
and V
IL
.
Operation with the t
RCD
(max) limit insures that t
RAC
(max) can be met, t
RCD
(max) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max) limit, then access time is
controlled exclusively by t
CAC
.
Operation with the t
RAD
(max) limit insures that t
RAC
(max) can be met, t
RAD
(max) is specified as a
reference point only; if t
RAD
is greater than the specified t
RAD
(max) limit, then access time is
controlled exclusively by t
AA
.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM71S4400CJ-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CLJ-60 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CLJ-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GMA01 | Very High-Speed Switching, Bias Stabilizing Applications |
| GMA01U | Very High-Speed Switching, Bias Stabilizing Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM71C4400CJ-80 | 制造商:LG 制造商全稱(chēng):LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CL | 制造商:LG 制造商全稱(chēng):LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CL-60 | 制造商:LG 制造商全稱(chēng):LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CL-70 | 制造商:LG 制造商全稱(chēng):LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CL-80 | 制造商:LG 制造商全稱(chēng):LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
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