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參數(shù)資料
| 型號： | GM71C4400CJ-70 |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 104K |
| 代理商： | GM71C4400CJ-70 |
LG Semicon
GM71C(S)4400C/CL
3
DC Electrical Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the output
open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
4. L-version.
5. V
CC
-0.2V<=V
IH
<=6.5V, 0V<=V
IL
<=0.2V.
Symbol
V
OH
Parameter
Note
V
OL
Output Level
Output
H
Level Voltage (I
OUT
= -5mA)
Output Level
Output
L
Level Voltage (I
OUT
= 4.2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
Unit
V
V
Max
V
CC
0.4
Min
2.4
0
I
CC1
mA
110
-
60ns
70ns
80ns
100
90
-
-
1, 2
I
CC2
mA
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS= V
IH
, D
OUT
= High-Z)
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min)
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V , D
OUT
=High-Z)
2
-
I
CC3
mA
2
I
CC4
mA
1, 3
110
-
60ns
70ns
80ns
100
90
-
-
110
100
-
-
60ns
70ns
80ns
90
-
I
CC5
mA
1
-
I
CC6
mA
CAS-before-RAS Refresh Current
(t
RC
= t
RC
min)
110
-
60ns
70ns
80ns
100
90
-
-
I
CC7
uA
300
-
4, 5
uA
200
-
5
I
CC8
mA
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
= Enable
5
-
1
I
I(L)
uA
10
-10
I
O(L)
uA
10
-10
Input Leakage Current
Any Input (0V<=V
IN
<=7V)
Output Leakage Current
(D
OUT
is Disabled, 0V<=V
OUT
<=7V)
Battery Back Up Current (Standby with CBR Refresh)
(t
RC
=125us, t
RAS
<=1us, WE=V
IH
, CAS=V
IL
,
OE, Address and D
IN
=V
IH
or V
IL
, D
OUT
=High-Z)
4, 5
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