參數(shù)資料
型號(hào)： FLL600IQ-3
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： L-Band Medium & High Power GaAs FET
中文描述： L波段中等
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 102K
代理商： FLL600IQ-3
1
Edition 1.7
December 1999
FLL600IQ-3
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in WLL and MMDS base station amplifiers as it offers high
gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Push-Pull Configuration
High Power Output: 60W
High PAE: 43%.
Broad Frequency Range: 2000 to 2700 MHz.
Suitable for class AB operation.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IQ
Symbol
I
DSS
V
GSO
-
12
-
-
24
32
-1.0
-2.0
-3.5
-5
-
-
47.0
48.0
-
9.0
10.0
-
-
43
-
-
0.8
1.2
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Channel to Case
V
DS
= 12V
f=2.7 GHz
I
DS
= 4.0A
A
S
V
dB
dBm
V
°
C/W
%
gm
V
p
P
1dB
G
1dB
η
add
Drain Current
-
11.0
15.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
125
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
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