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參數(shù)資料
| 型號： | FLM0910-12F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | X-Band Internally Matched FET |
| 中文描述： | X波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 183K |
| 代理商： | FLM0910-12F |
X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=40.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
η
add=25%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
CASE STYLE: IB
Edition 1.2
September 2004
1
FLM0910-12F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
PTot
T
stg
15
-5
57.6
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Typ.
6.0 9.0
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
mS
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
η
add
A
-
5000 -
-0.5 -1.5 -3.0
-5.0 -
-
39.5 40.5 -
6.0 7.0 -
-
3.5 4.5
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.5Idss (typ.)
Zs=Z
L
=50
Power-added Efficiency
%
-
25 -
-
-
1.2
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=3.6A
V
DS
=5V, I
DS
=300mA
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-340uA
G
1dB
dB
Thermal Resistance
R
th
T
ch
Channel to Case
-
2.3 2.6
o
C/W
Channel Temperature Rise
10V X Idsr X Rth
-
-
80
o
C
DESCRIPTION
The FLM0910-12F is a power GaAs FET that is internally matched
for standard communication and radar bands to provide optimum
power and gain in a 50
system.
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
°
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Gate Current
V
DS
I
GS
≤
10
≤
32.0
≥
-5.6
V
mA
Limit
R
G
=50
Gate Current
I
GR
R
G
=50
mA
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Note:RF-Test is measured with Vgs-Constant Circuit.
ESD
Class
Ⅲ
2000V
~
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM0910-15F | X-Band Internally Matched FET |
| FLM0910-25F | X-Band Internally Matched FET |
| FLM0910-3F | X, Ku-Band Internally Matched FET |
| FLM0910-4F | X, Ku-Band Internally Matched FET |
| FLM0910-8F | X, Ku-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM0910-15F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X-Band Internally Matched FET |
| FLM0910-25F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7dB, 9.5 10.5GHz, 6500mA, Bulk |
| FLM0910-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM0910-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM0910-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 9.5 10.5GHz, 2200mA, Bulk |
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