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參數(shù)資料
| 型號： | FLL810IQ-4C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | FLL810IQ-4C |
1
Edition 1.1
October 2001
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
136
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
FEATURES
Push-Pull Configuration
High Power Output: 80W
High PAE: 45%.
Excellent Linearity
Suitable for class AB operation.
Hermetically Sealed Package
DESCRIPTION
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
which offers excellent linearity, ease of matching, and greater consistency in
covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely
suited for use in WLL applications as it offers high gain, long term reliability and
ease of use.
FLL810IQ-4C
L-Band High Power GaAs FET
Item
Symbol
V
DS
= 12V
f = 3.6 GHz
I
DS
= 5.0A
Pin = 43.0dBm
Gate-Source Breakdown Voltage
V
GSO
-5
-
-
I
GS
= -2.2mA
V
Pinch-Off Voltage
-0.1
-0.3
-0.5
V
DS
= 5V, I
DS
= 220mA
V
V
p
Drain Current
-
8
-
V
DS
= 5V, V
GS
= 0V
A
I
DSS
Drain Current
-
11.5
15.0
A
I
DSR
Output Power
48.0
49.0
-
dBm
P
out
Linear Gain (Note 1)
8.5
9.5
-
dB
GL
Power-Added Efficiency
-
45
-
%
η
add
Thermal Resistance
-
0.8
1.1
Channel to Case
°
C/W
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm.
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