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參數(shù)資料
| 型號： | FLL600IQ-2C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | FLL600IQ-2C |
1
Edition 1.0
February 2000
FLL600IQ-2C
L-Band High Power GaAs FET
DESCRIPTION
The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
FEATURES
Push-Pull Configuration
High Power Output: 60W (Typ.)
High PAE: 51% (Typ.)
Broad Frequency Range: 2100 to 2200 MHz.
Suitable for class AB operation.
APPLICATIONS
Solid State Base-Station Power Amplifier.
W-CDMA and IMT 2000 Communication Systems.
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
V
GSO
-
6
-
-0.1
-0.3
-0.5
-5
-
-
47.0
48.0
-
11.0
12.0
-
-
51
-
-
0.8
1.2
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 151mA
I
GS
= -1.51mA
Channel to Case
V
DS
= 12V
f = 2.17 GHz
I
DS
= 1.5A
Pin = 39dBm
A
V
dB
dBm
V
°
C/W
%
V
p
P
out
GL
η
add
Drain Current
-
9
13
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
125
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with
gate resistance of 10
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL600IQ-2 | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
| FLL810IQ-3C | L-Band High Power GaAs FET |
| FLL810IQ-4C | L-Band High Power GaAs FET |
| FLLD261 | HIGH CONDUCTANCE LOW LEAKAGE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL600IQ-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET (48.0dBm@2.76GHz), Bulk |
| FLL800IQ-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL810IQ-3C | 制造商:FUJITSU 功能描述: |
| FLL810IQ-4C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLLA1 | 制造商:CLULITE 功能描述:FLOOD-A-LITE SPOT LIGHT HEAD |
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