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參數(shù)資料
| 型號： | FLL410IK-3C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 241K |
| 代理商： | FLL410IK-3C |
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2004 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A.
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
FLL410IK-3C
6
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.
HONG KONG BRANCH
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
FUJITSU QUANTUM DEVICES LTD.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL: +81-55-275-4411
FAX: +81-55-275-9461
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
Hachioji Daiichi-Seimei Bldg., 11
th
Floor
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
L-Band High Power GaAs FET
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL410IK-4C | L-Band High Power GaAs FET |
| FLL57MK | L-Band Medium & High Power GaAs FET |
| FLL600IQ-2C | L-Band High Power GaAs FET |
| FLL600IQ-2 | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL410IK-4C | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band High Power GaAs FET (46dBm@3.7GHz), Bulk |
| FLL500IQ-2 | 制造商:FUJITSU 功能描述: |
| FLL500IQ-3 | 制造商:FUJITSU 功能描述: |
| FLL57MK | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Single-end,L-Band, 11.5dB, 2.3GHz, 990mA, Bulk |
| FLL600IQ-2 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
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