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參數(shù)資料
| 型號(hào)： | FLL21E180IU |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | FLL21E180IU |
FEATURES
High Voltage Operation : VDS=28V
High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E180IU is a high power GaAs FET that offers
high efficiency, ease of matching, greater consistency and
broad bandwidth for high power L-band amplifiers.
This device is target for high voltage, low current operation in
digitally modulated base station. This product is ideally suited
for W-CDMA base station amplifiers while offering high gain long
term reliability and ease for use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
32 V
Gate-Source Voltage V
GS
Tc=25
o
C -3 V
Total Power Dissipation P
t
230 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
200
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=5V I
DS
=150mA -0.1 -0.2 -0.5 V
Gate-Source Breakdown Voltage V
GSO
I
GS
=-1.5mA -5 V
3rd Order Inter modulation Distortion IM
3
V
DS
=28V - -34 -30 dBc
Power Gain Gp
I
DS(DC)
=1.7A 14.0 15.0 - dB
Drain Efficiency
η
d
Pout=46dBm(Avg.) - 26.0 - %
Adjacent Channel Leakage Power Ratio ACLR note - -35 - dBc
Thermal Resistance R
th
Channel to Case - 0.55 0.65
o
C /W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
<28 V
Forward Gate Current I
GF
R
G
=1
<705 mA
Reverse Gate Current I
GR
R
G
=1
>-64 mA
Channel Temperature T
ch
155
o
C
FLL21E180IU
High Voltage - High Power GaAs FET
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