- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375831 > FLL400IP-2 (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) L-Band Medium & High Power GaAs FET PDF資料下載
參數(shù)資料
| 型號： | FLL400IP-2 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 113K |
| 代理商： | FLL400IP-2 |
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Thermal Resistance
Symbol
I
DSS
V
GSO
-
6000
-
-
12
16
-1.0
-2.0
-3.5
-5
-
-
44.5
45.5
-
9.0
10.0
-
-
44
-
-
-
1.0
1.4
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=7.2A
V
DS
= 5V, I
DS
=720mA
I
GS
= -720
μ
A
Channel to Case
V
DS
= 12V
f=1.96GHz
I
DS
= 2A
V
DS
= 10V
f=1.96GHz
I
DS
= 2A
A
mS
V
dB
dBm
V
°
C/W
%
gm
V
p
P
1dB
G
1dB
Power Gain at 1 dB G.C.P.
-
44.5
-
10.0
-
dB
dBm
P
1dB
G
1dB
η
add
Drain Current
-
6.0
8.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE: IP
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
107
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
1
APPLICATIONS
Solid State Base-Station Power Amplifier.
PCS/PCN Communication Systems.
Edition 1.6
December 1999
FLL400IP-2
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
FEATURES
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 44% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL410IK-3C | L-Band High Power GaAs FET |
| FLL410IK-4C | L-Band High Power GaAs FET |
| FLL57MK | L-Band Medium & High Power GaAs FET |
| FLL600IQ-2C | L-Band High Power GaAs FET |
| FLL600IQ-2 | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL400IP-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Pwr GaAs FET(45.0dBm@3.6GHz), Bulk |
| FLL410IK-3C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLL410IK-4C | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band High Power GaAs FET (46dBm@3.7GHz), Bulk |
| FLL500IQ-2 | 制造商:FUJITSU 功能描述: |
| FLL500IQ-3 | 制造商:FUJITSU 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。