參數(shù)資料
型號: FJP5554
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage Fast Switching Transistor
中文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-200, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 172K
代理商: FJP5554
2
www.fairchildsemi.com
FJP5554 Rev. A
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
Collector-Base Breakdown Voltage
I
C
= 500
μ
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 1050V, I
E
= 0
V
CB
= 400V, I
B
= 0
V
EB
= 15V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 3V, I
C
= 0.8A
I
C
= 1A, I
B
= 0.2A
I
C
= 3.5A, I
B
= 1.0A
I
C
= 3.5A, I
B
= 1.0A
1050
V
Collector-Emitter Breakdown Voltage
400
V
Emitter-Base Breakdown Voltage
15
23
V
Collector Cut-off Current
1
mA
Collector Cut-off Current
250
μ
A
Emitter Cut-off Current
1
mA
DC Current Gain
45
20
100
50
V
CE(sat)
Collector-Emitter Saturation Voltage
0.5
V
1.5
V
V
BE(sat)
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
1.5
V
Turn On Time
V
CC
=125V, I
C
=0.5A
I
B1
=45mA, I
B2
=0.5A
R
L
=250
1.0
μ
s
Storage Time
1.2
μ
s
Fall Time
0.3
μ
s
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