參數(shù)資料
型號: FDZ7064AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET BGA MOSFET
中文描述: 13.5 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, 3.50 X 4 MM, 0.76 MM HEIGHT, BGA-30
文件頁數(shù): 5/7頁
文件大?。?/td> 599K
代理商: FDZ7064AS
5
www.fairchildsemi.com
FDZ7064AS Rev. A
F
Typical Characteristics
SyncFET Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 12 FDZ7064AS.
Figure 12. FDZ7064AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET .
Figure 13. Non-SyncFET (FDZ7064N) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and temperature.
C
TIME : 12.5ns/div
C
TIME : 12.5ns/div
0.00001
0.0001
0.001
0.01
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
°
C
T
A
= 25
°
C
T
A
= 100
°
C
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