參數(shù)資料
型號： FDZ7064AS
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench SyncFET BGA MOSFET
中文描述： 13.5 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, 3.50 X 4 MM, 0.76 MM HEIGHT, BGA-30
文件頁數(shù)： 2/7頁
文件大小： 599K
代理商： FDZ7064AS
2
www.fairchildsemi.com
FDZ7064AS Rev. A
F
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1.
R
side of the solder ball, R
guaranteed by design while R
is determined with the device mounted on a 1 in
, is defined for reference. For R
2
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
is determined by the user's board design.
JB
JC
θ
JC
and R
θ
JB
are
θ
JA
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 10mA, Referenced to 25
= 0 V, I
D
= 1mA
30
V
DSS
J
Breakdown Voltage Temperature Coefficient I
D
°
C
25
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
uA
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
±100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 10mA, Referenced to 25
= V
GS
, I
D
= 1mA
1
1.4
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
°
C
–0.3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 10 V, I
= 4.5 V, I
=10 V, I
D
D
=13.5A, T
= 13.5 A
= 12 A
D
J
=125
°
C
4.6
5.7
5.9
5.6
7.1
7.4
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
V
GS
= 10 V,V
DS
= 13.5 A
= 5 V
60
A
Forward Transconductance
V
DS
= 5 V, I
D
61
S
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
1960
pF
C
oss
Output Capacitance
570
pF
C
rss
Reverse Transfer Capacitance
210
pF
R
G
Gate Resistance
V
GS
= 15 mV, I
D
= 6 A
1.4
W
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DS
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
9
18
nS
t
r
Turn–On Rise Time
12
22
nS
t
d(off)
Turn–Off Delay Time
39
62
nS
t
f
Turn–Off Fall Time
18
33
nS
Q
g(TOT)
Total Gate Charge, Vgs = 10V
V
DS
= 15 V, I
D
= 13.5A
36
51
nC
Q
g
Total Gate Charge, Vgs = 5V
20
28
nC
Q
gs
Gate–Source Charge
5
nC
Q
gd
Gate–Drain Charge
6
nC
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 13.5 A, d
See Diode Characteristic, page 5
= 0 V, I
S
= 3.2 A (Note 1)
0.4
0.7
V
t
rr
Diode Reverse Recovery Time
I
F
iF
/d
t
= 300 A/μs
23
nS
Q
rr
Diode Reverse Recovery Charge
21
nC
a) 56C/W when mounted on a
1in
pad of 2 oz copper
b) 119C/W when mounted on a mini-
mum pad of 2 oz copper
Scale 1 : 1 on letter size paper
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