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參數(shù)資料
| 型號： | FDZ7296 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench BGA MOSFET |
| 中文描述： | 11 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 218K |
| 代理商： | FDZ7296 |
November 2004
FDZ7296
30V N-Channel PowerTrench
ò
BGA MOSFET
2004 Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and R
DS(ON)
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Applications
High-side Mosfet in DC-DC converters for Server
and Notebook applications
Features
11 A, 30 V.
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
R
DS(ON)
= 12 m
@ V
GS
= 4.5 V
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8.
Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
High performance trench technology for extremely
low R
DS(ON)
Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
S
S
S
S
S
S
D
S
S
S
S
G
S
D
D
D
D
D
Pin 1
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
20
11
20
2.1
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
60
6.3
0.6
°
C/W
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
7296
FDZ7296
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
7
F
Top
Pin 1
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