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參數(shù)資料
| 型號： | FDG318P |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 1.5AI（四）|的TSOP |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | FDG318P |
FDG318P Rev B (W)
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -1.5A
V
DS
= -5V
-10V
-15V
0
100
200
300
400
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
10ms
1ms
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 260
o
C/W
T
A
= 25
o
C
0
0.0001
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 260°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 260 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Single Pulse
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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