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參數(shù)資料
| 型號： | FDG318P |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 1.5AI（四）|的TSOP |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 68K |
| 代理商： | FDG318P |
FDG318P Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Forward Leakage
I
GSSR
Gate–Body Reverse Leakage
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–16
mV/
°
C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V, V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–0.6
–1.1
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V, I
D
= –1.5 A
V
GS
= –4.5 V, I
D
= –1.5 A, T
J
= 125
°
C
V
GS
= –2.5 V, I
D
= –1.0 A
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –1.5 A
0.162
0.220
0.280
0.200
0.300
0.350
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–3
A
S
3.6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
266
115
31
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
23
14
4
2.8
0.8
0.8
16
37
25
12
4.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –1.5 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.62
–1.2
A
V
V
GS
= 0 V, I
S
= –0.62 A
(Note 2)
–0.77
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a.) 170°C/W when mounted on a 1in
2
pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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