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參數(shù)資料
| 型號(hào)： | FDG318P |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 1.5AI（四）|的TSOP |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | FDG318P |
November 1999
PRELIMINARY
1999 Fairchild Semiconductor Corporation
FDG318P Rev B (W)
FDG318P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).
Applications
Load switch
Power management
DC/DC converter
Features
–1.5 A, –20 V R
DS(ON)
= 0.200
@ V
GS
= –4.5 V
R
DS(ON)
= 0.350
@ V
GS
= –2.5 V
Low gate charge (2.8nC typical)
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
SC70-6
3
5
6
4
1
2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
12
–1.5
–6
0.75
0.48
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature
Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.18
FDG318P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG326 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG326P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG326P_Q | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327N_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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