參數(shù)資料
型號: F49L004BA
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 4 Mbit (512K x 8) 3V Only CMOS Flash Memory
中文描述: 4兆位(為512k × 8)3V時僅閃存的CMOS
文件頁數(shù): 41/46頁
文件大?。?/td> 371K
代理商: F49L004BA
EFS T
preliminary
F49L004UA / F49L004BA
Elite Flash Storage Technology Inc.
Publication Date : Aug. 2003
Revision: 0.2 41/46
10.4 TEMPORARY SECTOR UNPROTECT Operation
Table 14. Temporary Sector Unprotect
Symbol
Description
All Speed Options
Unit
T
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
T
RSP
ESET
Unprotect
R
Setup Time for Temporary Sector
Min
4
us
Notes:
Not 100% tested
Figure 24. Temporary Sector Unprotect Timing Diagram
Figure 25. Q6 vs Q2 for Erase and Erase Suspend Operations
Notes :
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an
erase-suspended.
W E
RY/BY
CE
RESET
t
V I D R
t
RS P
0 or V
CC
P r o g r am or E r as e C om m an d S eq u e n c e
t
V I D R
0 or V
CC
W E
DQ6
DQ2
Enter Embedded
Erasing
Er ase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Resum e
Erase
Erase
Complete
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