- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375699 > F25L008A-100DG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | F25L008A-100DG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 1M X 8 FLASH 3V PROM, PDIP8 |
| 封裝： | 0.300 INCH, LEAD FREE, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 17/31頁 |
| 文件大?。?/td> | 374K |
| 代理商： | F25L008A-100DG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
ES MT
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A
Chip-Erase instruction will be ignored if any of the memory area
is protected. Prior to any Write operation, the Write-Enable
(WREN) instruction must be executed. CE must remain active
low for the duration of the Chip-Erase instruction sequence. The
Chip-Erase instruction is initiated by executing an 8-bit command,
F25L008A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.4
17/31
Publication Date
:
May. 2007
60H or C7H. CE must be driven high before the instruction is
executed. The user may poll the Busy bit in the software status
register or wait T
CE
for the completion of the internal self-timed
Chip-Erase cycle.
See Figure 7 for the Chip-Erase sequence.
FIGURE 7 : CHIP-ERASE SEQUENCE
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that the
new commands are properly received by the device.
CE must be driven low before the RDSR instruction is entered
and
Read-Status-Register is continuous with ongoing clock cycles
until it is terminated by a low to high transition of the CE
See Figure 8 for the RDSR instruction sequence.
remain
low
until
the
status
data
is
read.
Figure 8 : READ-STATUS-REGISTER (RDSR) SEQUENCE
CE
SCK
SI
0
1
2
3
4
5
6
7
8
9
Bit7
MSB
MSB
HIGH IMPENANCE
SO
05
MODE3
MODE1
10
11
12
13
14
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Status
Register Out
CE
SCK
SI
0 1 2 3 4 5 6 7
MSB
HIGH IMPENANCE
SO
60 orC7
MODE3
MODE0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F25L008A-100PAG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L008A-50DG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L008A-50PAG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F28F008SA-85 | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| F28F008SA-120 | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F25L008A-100PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
| F25L008A-100PAIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
| F25L008A-50DG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
| F25L008A-50PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
| F25L008A-50PAIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8Mbit (1Mx8) 3V Only Serial Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。