參數(shù)資料
型號(hào): EDE5108AESK-6E-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits DDR2 SDRAM
中文描述: 64M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝: ROHS COMPLIANT, FBGA-60
文件頁數(shù): 59/66頁
文件大小: 697K
代理商: EDE5108AESK-6E-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
59
Refresh command to Power-Down Entry
Command
CKE
T0
T3
T5
T6
T7
T8
T9
T1
T2
T4
T10
CK
/CK
CKE can go to low one clock after an auto-refresh command
T11
REF
Active command to power down entry
Command
CKE
CKE can go to low one clock after an active command
ACT
Precharge/Precharge all command to power down entry
Command
CKE
CKE can go to low one clock after a precharge or precharge all command
PRE or
PALL
MRS/EMRS command to power down entry
Command
CKE
MRS or
EMRS
tMRD
相關(guān)PDF資料
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