參數(shù)資料
型號: EDE5108AESK-6E-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits DDR2 SDRAM
中文描述: 64M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝: ROHS COMPLIANT, FBGA-60
文件頁數(shù): 25/66頁
文件大?。?/td> 697K
代理商: EDE5108AESK-6E-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
25
Simplified State Diagram
INITALIZATION
AUTO REFRESH
SELF REFRESH
MRS
EMRS
tRFC
tRCD
tMRD
tRP
MRS
P
R
A
IDLE
ACTIVATING
PRECHARGE
BANK ACTIVE
WL + BL/2 + tWR
WRITA
READA
WRITE
W
WIA
R
WRT
WRIT
READ
READ
READ
CKEH
CKEL
CKEH
PDEN
CKEL
PDEN
PRECHARGE
POWER
DOWN
CKEL
SELFX
SELF
PRE
PRE
P
READA
READA
ACTIVE
POWER
DOWN
Automatic sequence
Command sequence
READ
Simplified State Diagram
相關(guān)PDF資料
PDF描述
EDE5108GBSA-4A-E 512M bits DDR-II SDRAM
EDE5104GBSA-5A-E RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80%
EDE5108GBSA-5A-E INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC
EDE5104GBSA 512M bits DDR-II SDRAM
EDE5108ABSE 512M bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5108AGBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGBG-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM