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參數(shù)資料
| 型號(hào)： | EBD11ED8ADFB-5 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| 中文描述： | 1GB的無緩沖DDR SDRAM的內(nèi)存（128M的話x72位，2個(gè)等級(jí)） |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 209K |
| 代理商： | EBD11ED8ADFB-5 |
EBD11ED8ABFB
Preliminary Data Sheet E0295E20 (Ver. 2.0)
11
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
1980
1755
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 2,
CL = 2.5,
tRC = tRC (min.)
CKE
≤
VIL
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-6B
-7A, -7B
2250
1980
mA
1, 2, 5
Idle power down standby current
IDD2P
54
mA
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
720
630
mA
≥
VIH, /CS
≥
VIH,
CKE
≥
VIH, /CS
≥
VIH,
CKE
Quiet idle standby current
IDD2Q
450
mA
Active power down
standby current
IDD3P
360
mA
CKE
≤
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
1260
1080
2520
2160
2520
2160
5220
4860
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
72
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
4500
3870
mA
BL = 4
5, 6, 7
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–36
36
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VDD
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/CS, CKE
CK, /CK
TBD
pF
Input capacitance
CI2
TBD
pF
Data and DQS input/output
capacitance
CO
DQ, DQS, CB
TBD
pF
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| EBD11ED8ADFB-5B | Connector |
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| EBD11ED8ADFB-6B | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-7A | 210390060 |
| EBD11ED8ADFB-7B | 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD11ED8ADFB-5B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-5C | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
| EBD11ED8ADFB-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) |
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