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參數(shù)資料
| 型號： | DS1963L-F5 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, MEDB2 |
| 封裝： | MICROCAN-2 |
| 文件頁數(shù)： | 16/24頁 |
| 文件大小： | 482K |
| 代理商： | DS1963L-F5 |
DS1963L
23 of 24
PHYSICAL SPECIFICATION
Size
See mechanical drawing
Weight
3.3 grams
Humidity
90% RH at 50°C
Altitude
10,000 feet
Expected Service Life
10 years at 25°C
Safety
Meets UL#913 (4th Edit.); Intrinsically Safe
Apparatus, Approval under Entity Concept for use in
Class I, Division 1, Group A, B, C and D Locations
(application pending)
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.5V to +7.0V
Operating Temperature
-40°C to +70°C
Storage Temperature
-40°C to +70°C
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICIAL CHARACTERISTIC
(VPUP=2.8V to 6.0V; -40°C to +70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Logic 1
VIH
2.2
V
1,8
Logic 0
VIL
-0.3
+0.8
V
1,9
Output Logic Low @ 4 mA
VOL
0.4
V
1
Output Logic High
VOH
VPUP
6.0
V
1,2
Input Load Current
IL
5
A
3
CAPACITANCE
(tA = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
I/O (1-Wire)
CIN/OUT
100
800
pF
6
AC ELECTRICAL CHARACTERISTICS REGULAR SPEED
(VPUP=2.8V to 6.0V; -40°C to +70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
60
120
s
Write 1 Low Time
tLOW1
115
s
Write 0 Low Time
tLOW0
60
120
s
Read Low Time
tLOWR
115
s
Read Data Valid
tRDV
exactly 15
s
Release Time
tRELEASE
015
45
s
Read Data Setup
tSU
1
s
5
Recovery Time
tREC
1
s
Reset Time High
tRSTH
480
s
4
Reset Time Low
tRSTL
480
s
7
Presence Detect High
tPDH
15
60
s
Presence Detect Low
tPDL
60
240
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1963L-F5+ | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1963L-F5+W | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1963R-F5+ | 制造商:Maxim Integrated Products 功能描述:- Rail/Tube |
| DS1963S | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:SHA iButton |
| DS1963S+F5 | 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube |
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