(TA = +25°C) PARAMETER SYMB" />
參數(shù)資料
型號(hào): DS1689SN+T&R
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 22/36頁(yè)
文件大?。?/td> 0K
描述: IC RTC SER NV RAM CTRL IN 28SOIC
標(biāo)準(zhǔn)包裝: 1,000
類型: 時(shí)鐘/日歷
特點(diǎn): NVSRAM
存儲(chǔ)容量: 114B
時(shí)間格式: HH:MM:SS(12/24 小時(shí))
數(shù)據(jù)格式: YY-MM-DD-dd
接口: 并聯(lián)
電源電壓: 2.7 V ~ 3.3 V,4.5 V ~ 5.5 V
電壓 - 電源,電池: 2.5 V ~ 3.7 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 28-SOIC
包裝: 帶卷 (TR)
DS1689/DS1693
29 of 36
POWER-UP/POWER-DOWN TIMING—5V
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
CS High to Power-Fail
tPF
0
ns
Recovery at Power-Up
tREC
150
ms
VCC Slew Rate Power-Down
tF
4.0
≤ VCC ≤ 4.5V
300
s
VCC Slew Rate Power-Down
tFB
3.0
≤ VCC ≤ 4.0V
10
s
VCC Slew Rate Power-Up
tR
4.5V
≥ VCC ≥ 4.0V
0
s
Expected Data Retention
tDR
10
years
13, 14
POWER-UP/POWER-DOWN TIMING—3V
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
CS High to Power-Fail
tPF
0
ns
Recovery at Power-Up
tREC
150
ms
VCC Slew Rate Power-Down
tF
2.5
≤ VCC ≤ 3.0V
300
s
VCC Slew Rate Power-Up
tR
3.0V
≥ VCC ≥ 2.5V
0
s
Expected Data Retention
tDR
10
years
13, 14
WARNING: Under no circumstances are negative undershoots, of any amplitude,
allowed when device is in battery-backup mode.
CAPACITANCE
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Capacitance
CIN
12
pF
Output Capacitance
COUT
12
pF
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