| 型號 | 廠商 | 描述 |
| 2n5575 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2n5849 2 3 4 |
TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 7A I(C) | STX-10 | |
| 2n5865 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-39 | |
| 2n5869 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3 | |
| 2n5884 2 3 4 |
意法半導(dǎo)體 | Complementary Silicon High Power Transistors(補(bǔ)償型硅高功率晶體管) |
| 2n5886 2 3 4 |
意法半導(dǎo)體 | Complementary Silicon High Power Transistors(互補(bǔ)硅高功率晶體管) |
| 2n5963 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
| 2n5961 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
| 2n5962 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
| 2n6027rl1 2 3 4 5 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| 2n6029 |
CENTRAL SEMICONDUCTOR CORP | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n5629 |
CENTRAL SEMICONDUCTOR CORP | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n6030 |
CENTRAL SEMICONDUCTOR CORP | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n6033 |
SEMELAB LTD | Bipolar NPN Device |
| 2n6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS | |
| 2n6033 |
Electronic Theatre Controls, Inc. | HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS |
| 2n6033 |
MICROSEMI CORP | NPN POWER SILICON TRANSISTOR |
| 2n6034 2 3 4 |
意法半導(dǎo)體 | MIDIUM POWER DAR;OMGTONS |
| 2n6035 2 3 4 |
意法半導(dǎo)體 | MIDIUM POWER DAR;OMGTONS |
| 2n6037 2 3 4 |
意法半導(dǎo)體 | MIDIUM POWER DAR;OMGTONS |
| 2n6038 2 3 4 |
意法半導(dǎo)體 | MIDIUM POWER DAR;OMGTONS |
| 2n6039 2 3 4 |
意法半導(dǎo)體 | MIDIUM POWER DAR;OMGTONS |
| 2n6035 2 3 4 |
ON SEMICONDUCTOR | Plastic Darlington Complementary Silicon Power Transistors |
| 2n6038 2 3 4 |
ON SEMICONDUCTOR | Plastic Darlington Complementary Silicon Power Transistors |
| 2n6039 2 3 4 |
ON SEMICONDUCTOR | Plastic Darlington Complementary Silicon Power Transistors |
| 2n6036 2 3 4 5 6 |
意法半導(dǎo)體 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2n6036 2 3 4 5 6 |
ON SEMICONDUCTOR | Plastic Darlington Complementary Silicon Power Transistors |
| 2n6050 2 3 4 |
意法半導(dǎo)體 | Silicon PNP Power Darlington Transistor(硅PNP功率達(dá)林頓晶體管) |
| 2n6050 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(12A,150W) |
| 2n6059 2 3 4 |
意法半導(dǎo)體 | SILICON NPN POWER DARLINGTON TRANSISTOR |
| 2n6050 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6051 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6052 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6057 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6058 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6059 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
| 2n6052 2 3 4 |
ON SEMICONDUCTOR | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n6058 2 3 4 |
ON SEMICONDUCTOR | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n6059 2 3 4 |
ON SEMICONDUCTOR | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2n6058 2 3 4 |
MICROSEMI CORP | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2n6059 2 3 4 |
MICROSEMI CORP | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2n6051 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,150W) |
| 2n6052 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(12A,150W) |
| 2n6057 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,150W) |
| 2n6058 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(12A,150W) |
| 2n6059 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,150W) |
| 2n6053 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(8A,100W) |
| 2n6056 2 3 4 |
ON SEMICONDUCTOR | NPN Darlington Silicon Power Transistor |
| 2n6054 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(8A,100W) |
| 2n6055 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(8A,100W) |